Mechanism and crucial parameters on GaN nanocluster formation in a silica matrix (bibtex)
by J. Kioseoglou, M. Katsikini, K. Termentzidis, I. Karakostas and E. C. Paloura
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Reference:
Mechanism and crucial parameters on GaN nanocluster formation in a silica matrix (J. Kioseoglou, M. Katsikini, K. Termentzidis, I. Karakostas and E. C. Paloura), In Journal of Applied Physics, volume 121, 2017.
Bibtex Entry:
@article{doi:10.1063/1.4975200,
	author = {J. Kioseoglou and M. Katsikini and K. Termentzidis and I. Karakostas and E. C. Paloura},
	title = {Mechanism and crucial parameters on GaN nanocluster formation in a silica matrix},
	journal = {Journal of Applied Physics},
	volume = {121},
	number = {5},
	pages = {054301},
	year = {2017},
	bibyear = {2017},
	doi = {10.1063/1.4975200},
	URL = { http://dx.doi.org/10.1063/1.4975200},
	eprint = { http://dx.doi.org/10.1063/1.4975200},
	call={pr001},
	acronym={NICE},
	fulltitle={Nitride semiconductors},
	pi={Kioseoglou Joseph},
	affiliation={Aristotle University of Thessaloniki},
	researchfield={Chemical Sciences and Materials}
}