by Th. Pavloudis, V. Brien and J. Kioseoglou
Reference:
Ab initio investigation of the AlN:Er system (Th. Pavloudis, V. Brien and J. Kioseoglou), In Computational Materials Science, volume 138, 2017.
Bibtex Entry:
@article{PAVLOUDIS2017128,
title = "Ab initio investigation of the AlN:Er system",
journal = "Computational Materials Science",
volume = "138",
number = "Supplement C",
pages = "128 - 134",
year = "2017",
bibyear = "2017",
issn = "0927-0256",
doi = "https://doi.org/10.1016/j.commatsci.2017.06.028",
url = "http://www.sciencedirect.com/science/article/pii/S0927025617303324",
author = "Th. Pavloudis and V. Brien and J. Kioseoglou",
keywords = "DFT+U",
keywords = "AlN",
keywords = "Er doping",
keywords = "Interstitial positions",
keywords = "Electronic properties",
call={pr002},
acronym={ATON},
fulltitle={ATOmic scale modelling in Nitride semiconductors},
pi={Joseph Kioseoglou},
affiliation={Aristotle University of Thessaloniki},
researchfield={Chemical Sciences and Materials}
}